Patent · US Expired

Proximity effect correction method through uniform removal of fraction of interior pixels

US6316164A · kind A · utility

4Cited by

6References

5Claims

0Family size

Inventors

N. William Parker · Fairfield, US
Daniel L. Cavan · Woodside, US
Alan D. Brodie · Palo Alto, US
John H. McCoy · Redwood City, US

Key dates

Filing date	Mar 16, 2000
Grant date	Nov 13, 2001
Priority date	—
Expiry date	Mar 16, 2020

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S430/143
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A proximity effect correction method for electron beam lithography suitable for use in a raster scan system. The exposure pattern consists of shapes; these shapes are subdivided into edge pixels and interior pixels; the pattern is then modified by uniformly removing a fraction of the interior pixels. The method reduces the backscattered electron background dose, improving the contrast for shapes with fine features, particularly when they are in close proximity to large or densely packed shapes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.