Method for treating a deposited film for resistivity reduction
US6319728A · kind A · utility
26Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1998 |
| Grant date | Nov 20, 2001 |
| Priority date | — |
| Expiry date | Jun 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76886
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing the resistivity of a copper layer on a wafer. A moisture containing seed layer of copper is formed over a layer of material on a wafer. The copper seed layer is treated by either heat or ions from a plasma to anneal out moisture thereby reducing its resistivity and improving its adhesion to the underlying layer. A moisture free copper layer is then deposited on top of the "clean" or treated copper seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.