PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter

US6342133B2 · kind B2 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Gerard C. D'Couto · San Jose, US
• George Tkach · Santa Clara, US
• Jeff Dewayne Lyons · Hayward, US
• Max Biberger · Palo Alto, US
• Kwok Fai Lai · Palo Alto, US
• Jean Lu · Palo Alto, US
• Kaihan Ashtiani · San Jose, US

Key dates

• Filing date: Mar 14, 2000
• Grant date: Jan 29, 2002
• Expiry date: Mar 14, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28568
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.