Method to improve adhesion of organic dielectrics in dual damascene interconnects
US6348407B1 · kind B1 · utility
198Cited by
8References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2001 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Mar 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of fabrication used for semiconductor integrated circuit devices, and more specifically to the use an alternate etch stop in dual damascene interconnects that improves adhesion between low dielectric constant organic materials. In addition, the etch stop material is a silicon containing material and is transformed into a low dielectric constant material (k=3.5 to 5), which becomes silicon-rich silicon oxide after UV radiation and silylation, oxygen plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.