Method to form narrow structure using double-damascene process
US6355528B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1999 |
| Grant date | Mar 12, 2002 |
| Priority date | — |
| Expiry date | Oct 26, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A narrow groove is formed over a substrate. To form such a narrow groove, a first material is formed over a substrate, the first material having a sidewall. A spacer is formed abutting the sidewall. Subsequently a second material is formed adjacent to the spacer. The spacer is removed leaving a groove between the first material and second material. In one embodiment, the groove is filled with material for a narrow feature, such as a gate, and the first material and second material are removed. As a result a gate or other narrow feature is formed having a length defined by the width of a spacer. In another embodiment, an implant is performed through the small groove, resulting in a small localized implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.