Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions

US6368987B1 · kind B1 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Stanislaw Kopacz · Phoenix, US
• Douglas A. Webb · Phoenix, US
• Gerrit J. Leusink · Albany, US
• Rene E. LeBlanc · East Haven, US
• Michael S. Ameen · Phoenix, US
• Joseph T. Hillman · Scottsdale, US
• Robert F. Foster · Minneapolis, US
• Robert Rowan · Phoenix, US

Key dates

• Filing date: Jun 6, 2000
• Grant date: Apr 9, 2002
• Expiry date: Jun 6, 2020

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/5096
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.