Use of optimized film stacks for increasing absorption for laser repair of fuse links
US6372522B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2000 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Aug 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system for repairable interconnect links using laser energy in a semiconductor integrated circuit die. The integrated circuit die is fabricated to include a plurality of interconnect links. At least a first and a second interconnect element are included in the integrated circuit die. The first and second interconnect elements are couple via an interconnect link. An anti-reflective layer is disposed on a surface above the interconnect link. The anti-reflective layer is configured to increase an amount of laser energy absorbed by the interconnect link in order to fuse the interconnect link, and thereby repair the integrated circuit die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.