Patent · US Expired

Use of optimized film stacks for increasing absorption for laser repair of fuse links

US6372522B1 · kind B1 · utility

3Cited by
3References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 1, 2000
Grant dateApr 16, 2002
Priority date
Expiry dateAug 1, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A system for repairable interconnect links using laser energy in a semiconductor integrated circuit die. The integrated circuit die is fabricated to include a plurality of interconnect links. At least a first and a second interconnect element are included in the integrated circuit die. The first and second interconnect elements are couple via an interconnect link. An anti-reflective layer is disposed on a surface above the interconnect link. The anti-reflective layer is configured to increase an amount of laser energy absorbed by the interconnect link in order to fuse the interconnect link, and thereby repair the integrated circuit die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.