Dielectric having an air gap formed between closely spaced interconnect lines

US6376330B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• H. Jim Fulford · Austin, US
• Robert Dawson · Austin, US
• Fred N. Hause · Austin, US
• Basab Bandyopadhyay · Austin, US
• Mark W. Michael · Cedar Park, US
• William S. Brennan · Austin, US

Key dates

• Filing date: Jun 5, 1996
• Grant date: Apr 23, 2002
• Expiry date: Jun 5, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/7682
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A dielectric material is provided having air gaps purposely formed within the dielectric. The dielectric is deposited, and air gaps formed, between respective interconnect lines. The geometries between interconnect lines is purposely controlled to achieve a large aspect ratio necessary to produce air gaps during CVD of the dielectric. Air gaps exist between interconnects to reduce the line-to-line capacitance, and thereby reduce the propagation delay associated with closely spaced interconnects.