RELACS process to double the frequency or pitch of small feature formation
US6383952B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2001 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Feb 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of doubling the frequency of small pattern formation. The method includes forming a photoresist layer, and then patterning it. A RELACS polymer is spread over the patterned photoresist layer. Portions of the RELACS polymer on top portions of each patterned photoresist region are removed, by either etching or by polishing them off. Portions between each patterned photoresist region are also removed in this step. The patterned photoresist regions are removed, preferably by a flood exposure and then application of a developer to the exposed photoresist regions. The remaining RELACS polymer regions, which were disposed against respective sidewalls of the patterned photoresist regions, prior to their removal, are then used for forming small pattern regions to be used in a semiconductor device to be formed on the substrate. These small pattern regions can be used to form separate poly-gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.