Doped structures containing diffusion barriers

US6399434B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Susan E. Chaloux · Wappingers Falls, US
• Johnathan E. Faltermeier · San Jose, US
• Ulrike Gruening · Wappingers Falls, US
• Rajarao Jammy · Hopewell Junction, US
• Christopher C. Parks · Beacon, US
• Paul C. Parries · Wappingers Falls, US
• Paul A. Ronsheim · Hopewell Junction, US
• Jean-Marc Rousseau · Ramonville-Saint-Agne, FR

Key dates

• Filing date: Apr 26, 2000
• Grant date: Jun 4, 2002
• Expiry date: Apr 26, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28512
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor structures having improved dopant configurations are obtained by use of barrier layers containing silicon, nitrogen, and oxygen atoms and having a thickness of about 5 to 50 å. A doped semiconductor structure with controlled dopant configuration can be formed by:(a) providing a first semiconductor material region,(b) forming an interface layer comprising silicon, oxygen, and nitrogen on the first region,(c) forming a second semiconductor material region on the interface layer, the second semiconductor material region being on an opposite side of the interface layer from the first semiconductor material region,(d) providing a dopant in the second region, and(e) heating the first and second regions whereby at least a portion of the dopant diffuses from the second region through the interface layer to the first region.