Processes to improve electroplating fill
US6399479B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1999 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Aug 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for filling a structure on a substrate comprising: depositing a barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, removing a portion of the seed layer, and electrochemically depositing a metal to fill the structure. Preferably, a portion or all of the seed layer formed on the sidewall portion of the structure is removed using a electrochemical de-plating process prior to the electroplating process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.