Reduced leakage trench isolation

US6410359B1 · kind B1 · utility

Assignee

• Intel Corporation · US

Inventors

• Kevin M. Connolly · Culver City, US
• Jung Kang · Chandler, US
• Berni W. Landau · Beaverton, US
• James Breisch · Chandler, US
• Akira Kakizawa · Phoenix, US
• Joseph Parks · Beaverton, US
• Mark A. Beiley · Chandler, US
• Zong-Fu Li · Gilbert, US
• Cory E. Weber · Portland, US
• Shaofeng Yu · Plano, US

Key dates

• Filing date: Mar 26, 2001
• Grant date: Jun 25, 2002
• Expiry date: Mar 26, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.