Low dielectric constant etch stop films
US6417092B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2000 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Apr 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An amorphous material containing silicon, carbon, hydrogen and nitrogen, provides a barrier/etch stop layer for use with low dielectric constant insulating layers and copper interconnects. The amorphous material is prepared by plasma assisted chemical vapor deposition (CVD) of alklysilanes together with nitrogen and ammonia. Material that at the same time has a dielectric constant less than 4.5, an electrical breakdown field about 5 MV/cm, and a leakage current less than or on the order of 1 nA/cm2 at a field strength of 1 Mv/cm has been obtained. The amorphous material meets the requirements for use as a barrier/etch stop layer in a standard damascene fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.