Immersed inductively—coupled plasma source
US6417626B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2001 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Mar 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system having a plasma source that efficiently couple radiofrequency energy to a plasma within a vacuum processing space of a vacuum chamber. The plasma source comprises a dielectric trough, an inductive element, and a pair of slotted deposition shields. A chamber wall of the vacuum chamber includes an annular opening that receives the dielectric trough. The trough projects into the vacuum processing space to immerse the inductive element within the plasma. The spatial distribution of the RF energy inductively coupled from the inductive element to the plasma may be tailored by altering the slots in the slotted deposition shields, the configuration of the inductive element, and the thickness or geometry of the trough. The efficient inductive coupling of radiofrequency energy is particularly effective for creating a spatially-uniform large-area plasma for the processing of large-area substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.