Method of using optical proximity effects to create electrically blown fuses with sub-critical dimension neck downs
US6436585B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 25, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Feb 25, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a photolithography mask for use in creating an electrical fuse on a semiconductor structure comprises initially determining a pattern for a desired electrical fuse, with the pattern including a fuse portion of substantially constant width except for a localized narrowed region of the fuse portion at which the electrical fuse is designed to blow. The method then includes providing a photolithography mask substrate and creating on the photolithography mask substrate a fuse mask element adapted to absorb transmission of an energy beam. The fuse mask element has a first mask portion of substantially constant width corresponding to the desired electrical fuse pattern portion of substantially constant width, and a second mask portion corresponding to the localized narrowed region of the fuse portion. The second mask portion comprises either an additional mask element spaced from the first mask portion, a narrowed width portion, or a gap in the first mask portion. The second mask portion is of a configuration sufficient to create a latent image of the electrical fuse pattern, including the localized narrowed region of the fuse portion at which the electrical fuse is des…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.