Directing a flow of gas in a substrate processing chamber
US6450117B1 · kind B1 · utility
490Cited by
23References
61Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Aug 7, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing chamber 30 comprising a first gas distributor 65 adapted to provide a process gas into the chamber 30 to process the substrate 25, a second gas distributor 215 adapted to provide a cleaning gas into the chamber 30 to clean the chamber, and an exhaust 90 to exhaust the process gas or cleaning gas from the chamber 30.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.