Chemical mechanical polishing of a metal layer using a composite polishing pad
US6461226B1 · kind B1 · utility
13Cited by
5References
20Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Sep 5, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Nov 30, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24D13/142
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of polishing a wafer is disclosed. The wafer has formed thereon an oxide layer that has at least one via. A metal layer is formed on the oxide layer and in the via. The wafer is then polished against an outer portion of a polishing pad until the metal layer outside of the via has been removed. The outer portion has a first hardness. Next, the wafer is polished against an inner portion of the polishing pad. The inner portion of the polishing pad has a second hardness that is less than the first hardness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.