Method of making memory wordline hard mask extension

US6479348B1 · kind B1 · utility

Assignees

• Advanced Micro Devices, Inc. · US
• FUJITSU LIMITED · JP

Inventors

• Tazrien Kamal · Atlanta, US
• Minh Van Ngo · Fremont, US
• Mark T. Ramsbey · Sunnyvale, US
• Jeffrey A. Shields · Sunnyvale, US
• Jean Y. Yang · Sunnyvale, US
• Emmanuil Lingunis · San Jose, US
• Hidehiko Shiraiwa · San Jose, US
• Angela T. Hui · Fremont, US

Key dates

• Filing date: Aug 27, 2002
• Grant date: Nov 12, 2002
• Expiry date: Aug 27, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

A manufacturing method is provided for an integrated circuit memory with closely spaced wordlines formed by using hard mask extensions. A charge-trapping dielectric material is deposited over a semiconductor substrate and first and second bitlines are formed therein. A wordline material and a hard mask material are deposited over the wordline material. A photoresist material is deposited over the hard mask material and is processed to form a patterned photoresist material. The hard mask material is processed using the patterned photoresist material to form a patterned hard mask material. The patterned photoresist is then removed. A hard mask extension material is deposited over the wordline material and is processed to form a hard mask extension. The wordline material is processed using the patterned hard mask material and the hard mask extension to form a wordline, and the patterned hard mask material and the hard mask extension are then removed.