Computer readable medium for controlling a method of cleaning a process chamber

US6482746B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Anand Vasudev · Menlo Park, US
• Toshio Itoh · Susono, JP
• Ramamujapuram A. Srinivas · San Jose, US
• Frederick Wu · Cupertino, US
• Li Wu · Fremont, US
• Brian Boyle · Farmington Hills, US
• Mei Chang · San Jose, US

Key dates

• Filing date: Jun 5, 2001
• Grant date: Nov 19, 2002
• Expiry date: Jun 5, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/906
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner sur aces of the chamber prior to utilizing the chamber for he deposition of such material. The protective layer is replenished following each two-stage cleaning.