Stress tunable tantalum and tantalum nitride films
US6488823B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1999 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Nov 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure pertains to our discovery that residual stress residing in a tantalum film or tantalum nitride film can be controlled (tuned) during deposition by adjusting at least two particular process variables which have counteracting effects on the residual film stress. By tuning individual film stresses within a film stack, it is possible to balance stresses within the stack. Process variables of particular interest include: power to the sputtering target process chamber pressure (i.e., the concentration of various gases and ions present in the chamber); substrate DC offset bias voltage (typically an increase in the AC applied substrate bias power); power to an ionization source (typically a coil); and temperature of the substrate upon which the film is deposited. The process chamber pressure and the substrate offset bias most significantly affect the film tensile and compressive stress components, respectively. The most advantageous tuning of a sputtered film is achieved using high density plasma sputter deposition, which provides for particular control over the ion bombardment of the depositing film surface. When the tantalum or tantalum nitride film is deposited us…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.