Method for forming copper interconnects

US6489240B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• John A. Iacoponi · San Jose, US
• Paul R. Besser · Sunnyvale, US
• Frederick N. Hause · Austin, US
• Frank Mauersberger · Radebeul, DE
• Errol Todd Ryan · Wappingers Falls, US
• William S. Brennan · Austin, US
• Peter J. Beckage · Austin, US

Key dates

• Filing date: May 31, 2001
• Grant date: Dec 3, 2002
• Expiry date: May 31, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/7684
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a semiconductor having improved copper interconnects is provided. The method comprises forming a first dielectric layer above a first structure layer. Thereafter, a first opening is formed in the first dielectric layer, and a first copper layer is formed above the first dielectric layer and in the first opening. A portion of the first copper layer outside of the opening is removed. A surface portion of the first copper layer is also removed from within the opening, and a second layer of copper is formed above the first layer of copper, replacing the removed surface portion.