Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6503330B1 · kind B1 · utility
463Cited by
57References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 22, 1999 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Dec 22, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45544
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for performing atomic layer deposition in which a surface of a substrate is pretreated to make the surface of the substrate reactive for performing atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.