Method of forming capped copper interconnects with reduced hillock formation and improved electromigration resistance
US6506677B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2001 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | May 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The electromigration resistance of capped Cu or Cu alloy interconnects is significantly improved by sequentially and contiguously treating the exposed planarized surface of in-laid Cu with a plasma containing NH3 and N2, ramping up the introduction of SiH4 and then initiating deposition of a silicon nitride capping layer. Embodiments include treating the exposed surface of in-laid Cu with a soft NH3 plasma diluted with N2, ramping up the introduction of SiH4 in two stages, and then initiating plasma enhanced chemical vapor deposition of a silicon nitride capping layer, while maintaining substantially the same pressure, N2 flow rate and NH3 flow rate during plasma treatment, SiH4 ramp up and silicon nitride deposition. Embodiments also include Cu dual damascene structures formed in dielectric material having a dielectric constant (k) less than about 3.9.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.