Method of channel hot electron programming for short channel NOR flash arrays
US6510085B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2001 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | May 18, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of programming and soft programming short channel NOR flash memory cells that reduce the programming currents and column leakages during both programming and soft programming while maintaining fast programming speeds. During programming, a voltage of between 7 and 10 volts is applied to the control gate, a voltage of between 4 and 6 volts; is applied to the drain, a voltage of between 0.5 and 2.0 volts is applied to the source and a voltage of between minus 2 and minus 0.5 volts is applied to the substrate of the selected cell to be programmed. During soft programming, a voltage of between 0.5 and 4.5 volts is applied to the control gates, between 4 and 5.5 volts is applied to the drains, between 0.5 and 2 volts is applied to the sources and between minus 2.0 and minus 0.5 volts is applied to the substrates of the memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.