Multilayer anti-reflective coating process for integrated circuit fabrication
US6548423B1 · kind B1 · utility
15Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2002 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Jan 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method utilizing a multilayer anti-reflective coating layer structure. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.