Method for forming openings for conductive interconnects

US6555479B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Frederick N. Hause · Austin, US
• Paul R. Besser · Sunnyvale, US
• Frank Mauersberger · Radebeul, DE
• Errol Todd Ryan · Wappingers Falls, US
• William S. Brennan · Austin, US
• John A. Iacoponi · San Jose, US
• Peter J. Beckage · Austin, US

Key dates

• Filing date: Jun 11, 2001
• Grant date: Apr 29, 2003
• Expiry date: Jun 11, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2221/1021
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a conductive interconnect comprises forming a process layer over a structure layer and forming a mask over the process layer, the mask having an etch profile therein. An anisotropic etching process is performed to erode the mask and to form an etched region in the process layer, the etched region having a profile correlating to the etch profile. A conductive material is formed in the etched region in the process layer and any excess conductive material is removed from above an upper surface of the process layer.