Deposition chamber and method for depositing low dielectric constant films

US6589610B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Shijian Li · San Jose, US
• Yaxin Wang · San Jose, US
• Fred C. Redeker · Fremont, US
• Tetsuya Ishikawa · Fuji, JP
• Alan W. Collins · San Francisco, US

Key dates

• Filing date: Jun 17, 2002
• Grant date: Jul 8, 2003
• Expiry date: Jun 17, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J37/3244
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.