Process for depositing and developing a plasma polymerized organosilicon photoresist film
US6589715B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 15, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Jul 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for etching a PPMS layer that increases the etch selectivity of PPMS relative to PPMSO from an initial low etch selectivity to a higher etch selectivity at a later stage of the etching process. In some embodiments, the etch selectivity used during a first etching step of the process is less than 4:1 and the etch selectivity used during a second etching step, subsequent to the first step, is greater than 5:1. In some other embodiments, the etch selectivity of the first step is between 2-3:1 and the etch selectivity of the second step is greater than 8:1. Optionally, in still other embodiments a third etching step, performed between the first and second etching steps may be employed where the etch selectivity is between 3-8:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.