Method for reclaiming delaminated wafer and reclaimed delaminated wafer
US6596610B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 25, 2001 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Jul 25, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.