Patent · US Expired

Method of forming copper interconnect capping layers with improved interface and adhesion

US6596631B1 · kind B1 · utility

9Cited by

4References

19Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Minh Van Ngo · Fremont, US
Hartmut Ruelke · Dresden, DE
Lothar Mergili · Dresden, DE
Joerg Hohage · Dresden, DE
Lu You · Santa Clara, US
Robert A. Huertas · Hollister, US
Richard J. Huang · Cupertino, US

Key dates

Filing date	Jul 26, 2000
Grant date	Jul 22, 2003
Priority date	—
Expiry date	Apr 9, 2021

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/913
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The integrity of the interface and adhesion between a barrier or capping layer and a Cu or Cu alloy interconnect member is significantly enhanced by delaying and/or slowly ramping up the introduction of silane to deposit a silicon nitride capping layer after treating the exposed planarized surface of the Cu or Cu alloy with an ammonia-containing plasma. Other embodiments include purging the reaction chamber with nitrogen at elevated temperature to remove residual gases prior to introducing the wafer for plasma treatment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.