Shallow trench isolation formation with ion implantation
US6599810B1 · kind B1 · utility
13Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1998 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Jan 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulated trench isolation structure is formed by ion implanting impurities proximate to the trench edges for enhancing the oxidation rate and, hence, increasing the thickness of the oxide at the trench edges. Embodiments include ion implanting impurities prior to growing an oxide liner. The resulting thick oxide on the trench edges avoids overlap of a subsequently deposited polysilicon layer and breakdown problems attendant upon a thinned gate oxide at the trench edges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.