Methods of forming capped copper interconnects with improved electromigration resistance

US6599827B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Minh Van Ngo · Fremont, US
• Steven C. Avanzino · Cupertino, US
• Amit P. Marathe · Milpitas, US
• Hartmut Ruelke · Dresden, DE

Key dates

• Filing date: May 2, 2001
• Grant date: Jul 29, 2003
• Expiry date: May 2, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76883
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The electromigration resistance of capped Cu or Cu alloy interconnects is significantly improved by pumping out the deposition chamber after treating the exposed planarized surface of the Cu or Cu alloy with an ammonia-containing plasma, introducing NH3 and N2 into the deposition chamber, and then ramping up the introduction of SiH4 prior to initiating deposition of a silicon nitride capping layer. Embodiments include ramping up the introduction of SiH4 in two stages prior to initiating plasma enhanced chemical vapor deposition of the silicon nitride capping layer.