Method of forming a contact structure and a container capacitor structure

US6620680B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• D. Mark Durcan · Boise, US
• Trung T. Doan · Los Gatos, US
• Roger Lee · Boise, US
• Fernando Gonzalez · Boise, US

Key dates

• Filing date: Feb 22, 2002
• Grant date: Sep 16, 2003
• Expiry date: Feb 22, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/312

Abstract

Method for forming at least a portion of a top electrode of a container capacitor and at least a portion of a contact plug in one deposition are described. In one embodiment, the top electrode is formed interior to a bottom electrode of the container capacitor. In another embodiment, the top electrode is formed interior to, and exterior and below a portion of the bottom electrode of the container capacitor. The method of forming a top electrode of a container capacitor and a contact plug with a same deposition is particularly well-suited for high-density memory array formation.