Low resistivity deep trench fill for DRAM and EDRAM applications

US6620724B1 · kind B1 · utility

Assignees

• Infineon Technologies AG · DE
• International Business Machines Corporation · US

Inventors

• Uwe Schroeder · Fishkill, US
• Helmut Tews · Poughkeepsie, US
• Irene McStay · Hopewell Junction, US
• Manfred Hauf · Wappingers Falls, US
• Matthias Goldbach · Dresden, DE
• Bernhard Sell · Dresden, DE
• Harald Seidl · Brandenburg an der Havel, DE
• Dirk Schumann · Lübbenau/Spreewald - Lubnjow/Błota, DE
• Rajarao Jammy · Hopewell Junction, US
• Joseph F. Shepard, Jr. · Hopewell Junction, US
• Jean-Marc Rousseau · Ramonville-Saint-Agne, FR

Key dates

• Filing date: May 9, 2002
• Grant date: Sep 16, 2003
• Expiry date: May 9, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/038

Abstract

Semiconductor devices having deep trenches with fill material therein having low resistivity are provided along with methods of fabricating such semiconductor devices.