Plasma processing apparatus
US6622650B2 · kind B2 · utility
15Cited by
2References
5Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 30, 2000 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Mar 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32192
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system may include a vacuum vessel, a substrate table arranged in the vacuum vessel, and a radio-frequency power supply system for generating high-frequency waves. A waveguide may be provided for guiding high-frequency waves into the vacuum vessel, and a dielectric member may be arranged at an end portion of the waveguide. The plasma processing system may also include a conductive film arranged on the dielectric member and facing the substrate table, wherein the conductive film may have a thickness smaller than or approximately equal to a skin thickness of the conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.