Method and apparatus for depositing a tantalum-containing layer on a substrate
US6627050B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2001 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Jul 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a tantalum-containing layer on a substrate is described. The tantalum-containing layer is formed using a physical vapor deposition technique wherein a magnetic field in conjunction with an electric field function to confine material sputtered from a tantalum-containing target within a reaction zone of a deposition chamber. The electric field is generated by applying a power of at least 8 kilowatts to the tantalum-containing target. The magnetic field is generated from a magnetron including a first magnetic pole of a first magnetic polarity surrounded by a second magnetic pole of a second magnetic polarity opposite the first magnetic polarity. The first magnetic pole preferably has a magnetic flux at least about 30% greater than a magnetic flux of the second magnetic pole. The tantalum-containing layer deposition method is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.