Microelectronic interconnect material with adhesion promotion layer and fabrication method
US6627995B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2002 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Apr 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier includes a refractory metal such as cobalt, cobalt-based alloys, ruthenium or ruthenium-based alloys for promoting adhesion of copper. The barrier materials can be deposited by chemical-vapor deposition to achieve good step coverage and a relatively conformal thin film with a good nucleation surface for subsequent metallization such as copper metallization. In one embodiment, the barrier suppresses diffusion of copper into other layers of the device, including the inter-metal dielectric, pre-metal dielectric, and transistor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.