Preparation of composite high-K/standard-K dielectrics for semiconductor devices
US6645882B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2002 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Jan 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of fabricating the semiconductor device having a composite dielectric layer including steps of providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, in which one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material comprising aluminum oxide; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.