Inductively-coupled plasma processing system
US6652711B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Aug 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.