Flash memory with controlled wordline width

US6653190B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Jean Y. Yang · Sunnyvale, US
• Kouros Ghandehari · Santa Clara, US
• Tazrien Kamal · Atlanta, US
• Minh Van Ngo · Fremont, US
• Mark T. Ramsbey · Sunnyvale, US
• Dawn Hopper · San Jose, US
• Angela T. Hui · Fremont, US
• Scott A. Bell · San Jose, US

Key dates

• Filing date: Dec 15, 2001
• Grant date: Nov 25, 2003
• Expiry date: Dec 15, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

A method of manufacturing for a MirrorBit® Flash memory includes depositing a charge-trapping material over a semiconductor substrate and implanting first and second bitlines in the semiconductor substrate. A wordline material is deposited over the charge-trapping dielectric material and a hard mask material deposited thereon. An anti-reflective coating (ARC) material is deposited on the hard mask material and a photoresist material is deposited on the ARC followed by processing the photoresist material and the ARC material to form a photomask of a patterned photoresist and a patterned ARC. The hard mask material is processed using the photomask to form a hard mask. The patterned photoresist is removed and then the patterned ARC without damaging the hard mask or the wordline material. The wordline material is processed using the hard mask to form a wordline and the hard mask is removed without damaging the wordline or the charge-trapping material.