Silicon carbide inversion channel mosfets

US6653659B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Sei-Hyung Ryu · Cary, US
• Joseph Sumakeris · Apex, US
• Anant Agarwal · San Jose, US
• Ranbir Singh · Cary, US

Key dates

• Filing date: Jun 7, 2002
• Grant date: Nov 25, 2003
• Expiry date: Jun 7, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/931

Abstract

Silicon carbide devices and methods of fabricating silicon carbide devices are provided by forming a first p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate. At least one first region of n-type silicon carbide is formed extending through the first p-type silicon carbide epitaxial layer and to the n-type silicon carbide substrate so as to provide at least one channel region in the first p-type silicon carbide epitaxial layer. At least one second region of n-type silicon carbide is also formed adjacent and spaced apart from the first region of n-type silicon carbide. A gate dielectric is formed-over the first region of n-type silicon carbide and at least a portion of the second region of n-type silicon carbide. A gate contact is formed on the gate dielectric. A first contact is also formed so as to contact a portion of the p-type epitaxial layer and the second region of n-type silicon carbide. A second contact is also formed on the substrate. Thus, a silicon carbide power device may be formed without the need for a p-type implant.