In-situ monitoring during laser thermal annealing
US6656749B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2001 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Dec 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes thermal annealing source/drain regions with a laser, measuring a depth of the source/drain regions, and adjusting a parameter of the laser used in the thermal annealing process. After the laser is adjusted, the source/drain regions are laser thermal annealed again until a desired depth of the source/drain regions is obtained. An apparatus for processing a semiconductor device includes a chamber, a laser, a measuring device, and a controller. The semiconductor device is positioned within the chamber for processing. The laser is used to laser thermal anneal the semiconductor device within the chamber. The measuring device measures a depth of source/drain regions in the semiconductor device when the semiconductor device is within the chamber, and the controller receives measurement information from the measuring device and adjusts parameters of the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.