Semiconductor memory with deuterated materials

US6670241B1 · kind B1 · utility

Assignees

• Advanced Micro Devices, Inc. · US
• FUJITSU LIMITED · JP

Inventors

• Tazrien Kamal · Atlanta, US
• Arvind Halliyal · Cupertino, US
• Minh Van Ngo · Fremont, US
• Mark T. Ramsbey · Sunnyvale, US
• Jean Y. Yang · Sunnyvale, US
• Hidehiko Shiraiwa · San Jose, US
• Rinji Sugino · San Jose, US

Key dates

• Filing date: Apr 22, 2002
• Grant date: Dec 30, 2003
• Expiry date: Apr 22, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0413

Abstract

A device and method for manufacturing thereof for a MirrorBit® Flash memory includes providing a semiconductor substrate and successively depositing a first insulating layer, a charge-trapping layer, and a second insulating layer. First and second bitlines are implanted and wordlines are formed before completing the memory. Spacers are formed between the wordlines and an inter-layer dielectric layer is formed over the wordlines. One or more of the second insulating layer, wordlines, spacers, and inter-layer dielectric layers are deuterated, replacing hydrogen bonds with deuterium, thus improving data retention and substantially reducing charge loss.