Use of high-k dielectric materials in modified ONO structure for semiconductor devices
US6674138B1 · kind B1 · utility
256Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2001 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Jan 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabrication of a semiconductor device including a modified ONO structure, including forming the modified ONO structure by providing a semiconductor substrate; forming a first oxide layer on the semiconductor substrate; depositing a layer comprising a high-K dielectric material on the first oxide layer; and forming a top oxide layer on the layer comprising a high-K dielectric material. The semiconductor device may be, e.g., a MIRRORBIT™ two-bit EEPROM device or a floating gate flash device including a modified ONO structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.