Lithography method and lithography mask

US6686098B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gunther Czech · Radeberg, DE
• Christoph Friedrich · Hersbruck, DE
• Carsten Fülber · Dresden, DE
• Rainer Käsmaier · Fraunberg, DE
• Dietrich Widmann · Unterhaching, DE

Key dates

• Filing date: Dec 4, 2000
• Grant date: Feb 3, 2004
• Expiry date: Jul 16, 2021

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/32
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Layers are patterned with a lithography method during the fabrication of integrated circuits. A mask, which may be reflective or transmissive, for carrying out the method. The photosensitive layers are exposed to radiation that is emitted by a radiation source. The radiation lies in the extreme ultraviolet region and is guided via the mask onto the photosensitive layers.