Dielectric etch chamber with expanded process window

US6716302B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• James D. Carducci · Sunnyvale, US
• Hamid Noorbakhsh · Fremont, US
• Evans Lee · Milpitas, US
• Bryan Pu · San Jose, US
• Hongching Shan · San Jose, US
• Claes Bjorkman · Mountain View, US
• Siamak Salimian · Sunnyvale, US
• Paul Luscher · Sunnyvale, US
• Michael Welch · Pleasanton, US

Key dates

• Filing date: Sep 24, 2002
• Grant date: Apr 6, 2004
• Expiry date: Sep 24, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.