HSG semiconductor capacitor with migration inhibition layer
US6717202B2 · kind B2 · utility
5Cited by
20References
25Claims
0Family size
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Key dates
| Filing date | Oct 17, 2002 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Oct 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.
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