Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices

US6730523B2 · kind B2 · utility

Assignees

• ADVANCED TECHNOLOGY & MATERIALS CO., LTD. · US
• Siemens Aktiengesellschaft · DE

Inventors

• Frank Hintermaier · Hersbruck, DE
• Christine Dehm · Koblenzer Straße, DE
• Wolfgang Hoenlein · Unterhaching, DE
• Peter C. Van Buskirk · Newtown, US
• Jeffrey F. Roeder · Brookfield, US
• Bryan C. Hendrix · Danbury, US
• Thomas H. Baum · New Fairfield, US
• Debra A. Desrochers · Brookfield, US

Key dates

• Filing date: Jun 1, 2001
• Grant date: May 4, 2004
• Expiry date: Jun 1, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02271
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.