Apparatus for detecting defect in device and method of detecting defect

US6734687B1 · kind B1 · utility

Assignees

• HITACHI, LTD. · JP
• Hitachi Ulsi Systems Co., Ltd. · JP

Inventors

• Tohru Ishitani · Hitachinaka, JP
• Hidemi Koike · Hitachinaka, JP
• Aritoshi Sugimoto · Bunkyo, JP
• Isamu Sekihara · Fussa, JP
• Kaoru Umemura · Tokyo, JP
• Satoshi Tomimatsu · Kokubunji, JP
• Junzo Azuma · Tokyo, JP

Key dates

• Filing date: Dec 4, 2001
• Grant date: May 11, 2004
• Expiry date: Dec 4, 2021

Classification

• Technology area (CPC G): Physics
• CPC primary: G01R31/2851
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).