Method for fabricating a metal carbide layer and method for fabricating a trench capacitor containing a metal carbide

US6774005B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Gutsche · Dorfen, DE
• Peter Moll · Dresden, DE
• Bernhard Sell · Dresden, DE
• Annette Sanger · Dresden, DE
• Harald Seidl · Brandenburg an der Havel, DE

Key dates

• Filing date: Jul 26, 2002
• Grant date: Aug 10, 2004
• Expiry date: Jul 26, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28556
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

At least a partial layer of an upper capacitor electrode is formed by metal carbide, preferably by a transition metal carbide. In one embodiment, the metal carbide layer is formed by depositing an alternating sequence of metal-containing layers and carbon-containing layers on top of one another and then subjecting them to a heat treatment, in such a manner that they mix with one another. The patterning of the layer sequence can be carried out before the carbide formation step.